Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-07
2006-02-07
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S241000
Reexamination Certificate
active
06995418
ABSTRACT:
The invention relates to an integrated semiconductor memory with at least one memory cell having at least one transistor which forms an inversion channel in the switched-on state. The transistor comprises a structure element having a first source/drain region, a second source/drain region and a region arranged between the first and the second source/drain region, the structure element is insulated from a semiconductor substrate by an insulation layer, a gate dielectric being arranged on the structure element and a word line being arranged on the gate dielectric.
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patent: 5889304 (1999-03-01), Watanabe et al.
patent: 5953246 (1999-09-01), Takashima et al.
patent: 5999444 (1999-12-01), Fujiwara et al.
S.M. Sze, “Physics of Semiconductor Devices”, ISBN 0-471-09837-X, pp. 438-493, 1981, New York.
Infineon - Technologies AG
Vu David
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