Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-10-15
1993-07-20
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 52, 257184, 257431, 372 12, 372 45, H01L 2714, H01L 3100
Patent
active
052296229
ABSTRACT:
An integrated semiconductor device which forms an optoelectronic switch and includes: a directional coupler structure in which one of the guides receives the input light power and the other guide is formed by multiple quantum wells, which structure is so dimensioned that in the zero-bias state the switch is in the crossover state, and switching control means.
The structure includes layers which form at least one PIN structure in which the waveguide consisting of multiple quantum wells constitutes an intrinsic region I, and the control means include means for reverse-biasing of the PIN structure which supplies the negative feedback so that switching from one state to the other is initiated by a change in the level of the luminous power injected into the input waveguide.
REFERENCES:
patent: 3953810 (1976-04-01), Veilex
patent: 4093344 (1978-07-01), Damen et al.
patent: 4597638 (1986-07-01), Chemla et al.
Biren Steven R.
Hille Rolf
Ostrowski David
U.S. Philips Corp.
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