Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-12-25
2007-12-25
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S212000, C365S226000
Reexamination Certificate
active
11050428
ABSTRACT:
An integrated semiconductor memory device includes a temperature sensor circuit to generate a temperature-dependent control signal, a reference circuit to generate a temperature-independent reference signal, a comparator circuit and a voltage generator circuit. The comparator circuit generates a first level or second level of an activation signal in a manner dependent on the comparison of the control signal and the reference signal which are both fed to it on an input side. The voltage generator circuit generates a first control signal or a second control signal in a manner dependent on the level of the activation signal. The integrated semiconductor memory enables the generation of two control signals for a selection transistor of a memory cell in a manner dependent on whether the temperature sensor circuit detects a temperature in a first temperature range or in a second temperature range.
REFERENCES:
patent: 6084812 (2000-07-01), Joo
patent: 6438057 (2002-08-01), Ruckerbauer
patent: 6809980 (2004-10-01), Schnabel et al.
patent: 7027343 (2006-04-01), Sinha et al.
Fuhrmann Dirk
Lindstedt Reidar
Auduong Gene N.
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
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