Integrated semiconductor memory device

Details Integrated semiconductor memory device Integrated semiconductor memory device

1978-05-23

1979-05-29

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365149, 307238, G11C 1140

Patent

active

041569393

ABSTRACT:
An integrated semiconductor memory device is formed on a semiconductor substrate of one conductivity type on which there are provided peripheral circuits consisting of a pluality of memory cells each containing a storage capacitor and an IG FET. The IG FET in each memory cell acts as a transfer gate which is disposed on a surface region having the same conductivity type as that of the substrate and higher impurity concentrations than that of the substrate. The transfer gate has a gate threshold value which is higher than that of the IG FET in the peripheral circuits and which is insensitive to a noise pulse supplied thereto, whereby the destruction of data by noise pulse can be effectively prevented.

REFERENCES:
patent: 4112575 (1978-09-01), Fu et al.

Affiliated with

Also associated with

Rating

Integrated semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-233289