Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2005-06-07
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C365S054000, C365S182000
Reexamination Certificate
active
06903423
ABSTRACT:
An integrated semiconductor memory can include a plurality of subcircuit blocks arranged on nonoverlapping area sections. The subcircuit blocks each have a block supply line and a block ground line, which supply individual switching elements of the subcircuit blocks with a voltage. Each block supply line and block ground line is connected to a chip supply line and a chip ground line, which run outside the area sections of the subcircuit blocks. At least one connection between the chip supply line and the block supply line of at least one subcircuit block or between the chip ground line and the block ground line of at least one subcircuit block can be isolated by a switching device. Furthermore, a method for reducing leakage currents in a semiconductor memory, which, depending on the operating state of the semiconductor memory, isolates or connects individual subcircuit blocks of the semiconductor memory from or to a voltage supply.
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Egerer Jens
Fischer Helmut
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Ngo Ngan V.
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