Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-05-09
2008-12-30
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S211000, C365S222000, C365S233100
Reexamination Certificate
active
07471584
ABSTRACT:
An integrated semiconductor memory that has at least one temperature measuring element and repeatedly carries out a temperature measurement during the operation of the semiconductor memory, wherein the semiconductor memory repeats the temperature measurement at instants corresponding to a measuring frequency of the temperature measuring element. According to an embodiment of the invention, the measuring frequency of the temperature measuring element is variable and the temperature measuring element is driven in such a way that the measuring frequency changes in a manner dependent on the temporal development of measured values of the repeated temperature measurements.
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Ho Hoai V
Qimonda AG
Slater & Matsil L.L.P.
Weinberg Michael J
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