Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2006-01-13
2008-10-28
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S150000, C365S185050, C365S185080
Reexamination Certificate
active
07443713
ABSTRACT:
An integrated semiconductor memory device includes at least one memory cell, at least one sense amplifier and a pair of bit lines connected to each sense amplifier, where each memory cell includes a selection transistor and a storage capacitor. The storage capacitor of each memory cell includes a first capacitor electrode and a second capacitor electrode, and the selection transistor of each memory cell includes a first source/drain region that is connected by a first contact connection to one bit line of a pair of bit lines corresponding with the memory cell, and a second source/drain region that is conductively connected to the first capacitor electrode of the storage capacitor of the memory cell. The second capacitor electrode of the storage capacitor of each memory cell is connected to the other bit line of the pair of bit lines corresponding with the memory cell.
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Benzinger Herbert
Eggers Georg Erhard
Kliewer Jörg
Pröll Manfred
Schröder Stephan
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Luu Pho M.
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