Integrated semiconductor memory and method for operating a...

Static information storage and retrieval – Systems using particular element – Capacitors

Reexamination Certificate

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C365S150000, C365S185050, C365S185080

Reexamination Certificate

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07443713

ABSTRACT:
An integrated semiconductor memory device includes at least one memory cell, at least one sense amplifier and a pair of bit lines connected to each sense amplifier, where each memory cell includes a selection transistor and a storage capacitor. The storage capacitor of each memory cell includes a first capacitor electrode and a second capacitor electrode, and the selection transistor of each memory cell includes a first source/drain region that is connected by a first contact connection to one bit line of a pair of bit lines corresponding with the memory cell, and a second source/drain region that is conductively connected to the first capacitor electrode of the storage capacitor of the memory cell. The second capacitor electrode of the storage capacitor of each memory cell is connected to the other bit line of the pair of bit lines corresponding with the memory cell.

REFERENCES:
patent: 5018105 (1991-05-01), Miyanishi
patent: 5367481 (1994-11-01), Takase et al.
patent: 6198654 (2001-03-01), Ashikaga
patent: 6906945 (2005-06-01), Madan
patent: 7095666 (2006-08-01), Foss
patent: 2002/0085408 (2002-07-01), Ricodeau
patent: 2003/0002319 (2003-01-01), Ricodeau
patent: 103 34 424 (2004-08-01), None

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