Integrated semiconductor device with temperature sensing circuit

Details Integrated semiconductor device with temperature sensing circuit Integrated semiconductor device with temperature sensing circuit

1994-12-27

1996-03-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257362, 257467, 257469, 257470, 307117, 307651, H01L 31058

Patent

active

055005470

ABSTRACT:
A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.

REFERENCES:
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 5025298 (1991-06-01), Fay et al.
patent: 5237481 (1993-08-01), Soo et al.

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