Integrated semiconductor device having negative resistance forme

Details Integrated semiconductor device having negative resistance forme Integrated semiconductor device having negative resistance forme

1997-09-08

1998-11-17

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Negative resistance

257296, 257 30, 257104, G11C 1100

Patent

active

058386092

ABSTRACT:
A memory cell of an SRAM includes an access transistor, and an MIS switching diode. The access transistor has a drain electrode connected to a bit line of a corresponding column, a source electrode connected to a storage node, and a gate electrode connected to a word line of a corresponding row. The threshold voltage of the access transistor is small than the threshold voltage of a bit line load transistor. The MIS switching diode is connected between the storage node and a second power supply potential node. The switching initiate voltage of the MIS switching diode is greater than the difference between the first potential and the threshold voltage of the bit line load transistor, and smaller than the difference between the first potential and the threshold voltage of the access transistor. Thus, data can be read/written and held accurately.

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patent: 5594682 (1997-01-01), Lu et al.
patent: 5629546 (1997-05-01), Wu et al.

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