Integrated semiconductor device having a buried semiconductor la

Details Integrated semiconductor device having a buried semiconductor la Integrated semiconductor device having a buried semiconductor la

1993-01-05

1994-11-08

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257372, 257374, 257402, 257655, H01L 2702, H01L 2704, H01L 2712

Patent

active

053629817

ABSTRACT:
A structure and its fabrication method of an integrated semiconductor device including circuit elements such as MOSFETs. A well is formed in the semiconductor substrate within windows of a field oxide layer. A lightly-doped semiconductor layer is selectively formed on the exposed surface of the well. A channel region and a pair of source and drain regions of a MOSFET are formed in the lightly-doped semiconductor layer. The highly-doped buried semiconductor layer of the same conductivity type as that of the lightly-doped semiconductor layer is formed under the channel region in the lightly-doped semiconductor layer. The structural features and fabrication method provides a great degree of freedom in designing a MOSFET having a further shorter-channel length without deteriorating its drivability and punch-through breakdown voltage.

REFERENCES:
patent: 5023190 (1991-06-01), Lee et al.
patent: 5172203 (1992-12-01), Hayashi

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