Integrated semiconductor circuit with capacitors of precisely de

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257506, 257508, H01L 2900

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active

058443029

ABSTRACT:
An integrated semiconductor circuit, such as an A/D converter, includes a first zone having capacitors disposed therein. The capacitors have capacitor plates being formed of a first conductive layer and a second conductive layer. A second zone has circuit elements disposed therein. A planarizing layer and a cover layer insulate the first and second conductive layers from one another in the second zone, except for a possible peripheral region. A dielectric is formed only of the cover layer between the capacitor plates in the first zone, except for a possible peripheral region. A process for producing an integrated semiconductor circuit includes producing the first conductive layer; applying an insulating planarizing layer after producing the first conductive layer; removing the planarizing layer in the first zone until a surface of the first conductive layer is exposed, except for a possible peripheral region; applying an insulating cover layer over the entire surface; and producing the second conductive layer.

REFERENCES:
patent: 4924290 (1990-05-01), Enkaku et al.
patent: 5185650 (1993-02-01), Wakimoto et al.
patent: 5401989 (1995-03-01), Kikuchi
IBM Technical Disclosure Bulleting, No. 7, Dec. 1987, Decoupling Capacitor Structure to Reduce Fet.
IEEE Transactions on Circuit and Systems, No. 7, Jul. 1978, Terminology Related to the Performance of S/H.
IEEE Publ. 36(1989) Jun., No. 6, 3pages, "Transactions on Circuits and Systems".
IEEE Publ. vol. 67, No. 1, Jan. 1979 (Brodersen et al), pp. 61-75, "MOS Switched-Capacitor Filters".
IBM Technical Disclosure Bulletin, vol. 30, No. 7, 1987, pp. 167-168.

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