Integrated semiconductor circuit protected against high voltage

Details Integrated semiconductor circuit protected against high voltage Integrated semiconductor circuit protected against high voltage

1994-06-06

1995-10-31

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

327427, 327434, H03K 1704

Patent

active

054632390

ABSTRACT:
A circuit integrated on a semiconductor substrate in order to drive a load, (for example, a VFD) by means of a comparatively high voltage (for example, 35 V), includes a first and a second supply voltage terminal for application of the comparatively high voltage, an input, and a load output for connection of a load to be driven by the circuit. A switching transistor, a protection transistor and a sub-circuit are a part of the integrated circuit. The switching transistor and the protection transistor are connected in series with the gate of the switching transistor connected to the input. The source of the switching transistor is connected to a first supply voltage terminal, and the drain of the protection transistor supplies a signal for the sub-circuit during operation. The output of the sub-circuit is connected to the load output and the gate of the protection transistor receives a fixed voltage. The protection transistor is constructed so that it limits the voltage at the drain of the switching transistor.

REFERENCES:
patent: 4789917 (1988-12-01), Miller
patent: 4967103 (1990-10-01), Dikken et al.
patent: 5144518 (1992-09-01), Miyazari
Sze, S. M., "Semiconductor Devices, Physics and Technology", AT&T Bell Laboratories, N.J., 1985, pp. 347-348.
IEEE Custom Integrated Circuits Conference, Portland, Oreg., May 4-7, 1987 pp. 267-271.

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