Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-26
2008-05-13
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S321000, C257S324000, C257SE29268, C257SE29279
Reexamination Certificate
active
07372095
ABSTRACT:
An integrated semiconductor circuit includes a transistor and a strip conductor (11). The transistor includes a first (1) and a second source/drain region (2) and a gate electrode. The strip conductor (11) is electrically insulated from a semiconductor body at least by a gate dielectric and forms the gate electrode in the area of the transistor. The strip conductor (11) extends along a first direction (x) in the area of the transistor. The second source/drain region (2) is arranged offset with respect to the first source/drain region (1) in the first direction (x). The transistor thus formed has an inversion channel (K1) that only extends between two corner areas (1a, 2a) facing one another of the first and of the second source/drain region, i.e. is much narrower than in the case of a conventional transistor.
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English Translation of Office Action for related Chinese Patent Application No. 200480005541.8, 6 pages.
Infineon - Technologies AG
Slater & Matsil L.L.P.
Warren Matthew E.
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