Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-05-29
2007-05-29
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S189090, C365S226000, C365S189070
Reexamination Certificate
active
11100617
ABSTRACT:
Integrated semiconductor circuits, in particular, dynamic random access memories include a multiplicity of generator circuits for generating internal voltage levels from an externally applied supply voltage. During testing, the internal voltage levels are altered by the output voltage generated at the output of the generator circuit being adapted to an externally applied test voltage. If the test voltage is outside a tolerance range, the semiconductor circuit maybe destroyed. A protection circuit connected in parallel with the generator circuit limits the output voltage.
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Gnat Marcin
Schneider Ralf
Vollrath Joerg
von Campenhausen Aurel
Edell Shapiro & Finnan LLC
Elms Richard T.
Infineon - Technologies AG
Nguyen N
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