Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-20
2000-10-24
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257141, 257162, 257173, 257139, H01L 2976, H01L 2974
Patent
active
061371408
ABSTRACT:
An integrated SCR-LDMOS device (10) having a p+ region (13) in the drain region (12), but otherwise similar to a conventional LDMOS transistor. The device (10) may be implemented as a modification of a non-planar LDMOS (FIGS. 1 and 2). An alternate embodiment, device (30), may be implemented as a modification of a planar LDMOS (FIG. 3). In either case, the added p+ region (13, 37) provides the device (10, 30) with two parasitic bipolar transistors in an SCR configuration (FIGS. 4A and 4B).
REFERENCES:
patent: 4928155 (1990-05-01), Nakagawa et al.
patent: 5773852 (1998-06-01), Han et al.
patent: 5777365 (1998-07-01), Yamaguchi et al.
patent: 5905288 (1999-05-01), Ker
patent: 5925900 (1999-07-01), Amaratunga et al.
Buss Kenneth G.
Efland Taylor Rice
Kwan Stephen C.
Tsai Chin-Yu
Brady III W. James
Garner Jacqueline J.
Hu Shouxiang
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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