Integrated Schottky transistor logic configuration

Details Integrated Schottky transistor logic configuration Integrated Schottky transistor logic configuration

2005-08-23

2005-08-23

Tan, Vibol (Department: 2819)

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Bipolar transistor

C326S116000, C326S118000, C257S474000, C257S477000

Reexamination Certificate

active

06933751

ABSTRACT:
A logic gate is described that has an N-type region, which may be an N-well or N-tub, forming a cathode of one or more Schottky diodes and a collector of an NPN bipolar transistor. Accordingly, the Schottly diodes and transistor do not need to be isolated from one another, resulting in a very compact logic gate. The logic gate forms a portion of a NAND function in one embodiment. One or more Schottky diodes between the collector and base of the bipolar transistor act as a clamp to prevent the transistor from saturating. The clamp diodes can also be used to adjust the output voltage of the gate to ensure downstream transistors can be fully turned off.

REFERENCES:
patent: 4898838 (1990-02-01), Morris et al.
patent: 5140383 (1992-08-01), Morris et al.
patent: 5244832 (1993-09-01), Morris et al.
H. H. Berger et al., “Advanced Merged Transistor Logic By Using Schottky Junctions”, Microelectronics, vol. 7, pp. 35-42, Mar. 1976, pp. 88-95.

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