Integrated schottky diode and mosgated device

Details Integrated schottky diode and mosgated device Integrated schottky diode and mosgated device

1997-01-10

1999-03-23

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

2517343, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058863834

ABSTRACT:
A power MOS gated device having a polygonal cell structure is formed together with a Schottky diode in a common silicon substrate. The source contact metal of each polygonal cell also contacts the silicon substrate at the center of the cell to form the Schottky contact of the fast recovery Schottky diode. A notch is also formed in the top surface of the substrate through the source region, and the source contact metal fills the notch.

REFERENCES:
patent: 4466176 (1984-08-01), Temple
patent: 4503598 (1985-03-01), Vora et al.
patent: 4521795 (1985-06-01), Coe et al.
patent: 4631564 (1986-12-01), Neilson et al.
patent: 4837606 (1989-06-01), Goodman et al.
patent: 5223732 (1993-06-01), Clark
patent: 5631484 (1997-05-01), Isoi et al.

Affiliated with

Also associated with

Rating

Integrated schottky diode and mosgated device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated schottky diode and mosgated device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated schottky diode and mosgated device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2128857