Integrated RF ESD protection for high frequency circuits

Details Integrated RF ESD protection for high frequency circuits Integrated RF ESD protection for high frequency circuits

2011-07-05

2011-07-05

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S362000, C361S056000, C361S058000, C361S091100, C361S111000, C361S207000, C361S212000

Reexamination Certificate

active

07973365

ABSTRACT:
The invention relates to a high-frequency integrated circuit requiring ESD protection for a circuit node. One or more metallic layer is deposited within the integrated circuit and patterned to form a transmission line. The metallic layers are generally already present in the integrated circuit for signal routing. The transmission line is coupled between the circuit node and a terminal of an ESD protection device, with a transmission line return conductor coupled to a high-frequency ground. The transmission line is formed with an electrical length that transforms the impedance of the ESD protection device substantially into an open circuit at the circuit node at an operational frequency of the integrated circuit. The other terminal of the ESD protection device is coupled to the high-frequency ground.

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