Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-09-20
2005-09-20
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S529000, C257S536000
Reexamination Certificate
active
06946673
ABSTRACT:
A vertical-current-flow resistive element includes a monolithic region having a first portion and a second portion arranged on top of one another and formed from a single material. The first portion has a first resistivity, and the second portion has a second resistivity, lower than the first resistivity. To this aim, a monolithic region with a uniform resistivity and a height greater than at least one of the other dimensions is first formed; then the resistivity of the first portion is increased by introducing, from the top, species that form a prevalently covalent bond with the conductive material of the monolithic region, so that the concentration of said species becomes higher in the first portion than in the second portion. Preferably, the conductive material is a binary or ternary alloy, chosen from among TiAl, TiSi, TiSi2, Ta, WSi, and the increase in resistivity is obtained by nitridation.
REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 4181913 (1980-01-01), Thornburg
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6064079 (2000-05-01), Yamamoto et al.
patent: 6121127 (2000-09-01), Shibata et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 6791102 (2004-09-01), Johnson et al.
patent: 2002/0096512 (2002-07-01), Abbott et al.
patent: 2003/0151116 (2003-08-01), Cabral et al.
patent: 2004/0115372 (2004-06-01), Lowrey
patent: WO 02/09206 (2002-01-01), None
Sun, X. et al., “Reactively Sputtered Ti-Si-N Films I. Physical Properties,”J. Appl. Phys., 81(2):656-663, Jan. 1997.
Nicolet, M., “Diffusion Barriers in Semiconductor Contact Technology,” inProceedings of Defect and Diffusion Forum vols. 143-147, Pasadena, CA, 1997, pp. 1271-1284.
Sankaran, S. et al., “Development of TiSiN Diffusion Barriers for Cu/SiLK Metallization Schemes,”IEEE, pp. 40 and 42, 2000.
De Santi Giorgio
Marangon Maria Santina
Zonca Romina
Iannucci Robert
Jorgenson Lisa K.
Ovonyx Inc.
Quach T. N.
Seed IP Law Group PLC
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