Integrated resistor, phase-change memory element including...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S529000, C257S536000

Reexamination Certificate

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06946673

ABSTRACT:
A vertical-current-flow resistive element includes a monolithic region having a first portion and a second portion arranged on top of one another and formed from a single material. The first portion has a first resistivity, and the second portion has a second resistivity, lower than the first resistivity. To this aim, a monolithic region with a uniform resistivity and a height greater than at least one of the other dimensions is first formed; then the resistivity of the first portion is increased by introducing, from the top, species that form a prevalently covalent bond with the conductive material of the monolithic region, so that the concentration of said species becomes higher in the first portion than in the second portion. Preferably, the conductive material is a binary or ternary alloy, chosen from among TiAl, TiSi, TiSi2, Ta, WSi, and the increase in resistivity is obtained by nitridation.

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Sun, X. et al., “Reactively Sputtered Ti-Si-N Films I. Physical Properties,”J. Appl. Phys., 81(2):656-663, Jan. 1997.
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