Integrated resistor

Details Integrated resistor Integrated resistor

1998-12-07

2000-06-06

Tsai, Jey

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257536, 257904, H01L 2702

Patent

active

060722207

ABSTRACT:
A semiconductor body includes a lightly doped semiconductor zone of a second conductivity type. A first oxide layer is produced on the semiconductor body. A structured polysilicon layer is produced on the oxide layer. The polysilicon layer acts as a mask so that the dopants of one conductivity type are implanted and driven into the surface of the semiconductor zone. A second oxide layer is then produced on the surface of the polysilicon layer and the semiconductor zone. A spacer is etched from this oxide layer. Dopants of the second conductivity type are implanted and driven into the surface of the semiconductor zone. A narrow resistor zone remains lying under the polysilicon layer.

REFERENCES:
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patent: 5134088 (1992-07-01), Zetterlund
patent: 5212542 (1993-05-01), Okumura
patent: 5439841 (1995-08-01), Alter
patent: 5489547 (1996-02-01), Erdeljac et al.
patent: 5618749 (1997-04-01), Takahashi et al.
Yamauchi, "A Process for a CMOS Channel-Stop Implantation Self-Aligned to the p-Well and p-Well Active Area", IEEE Transactions on Electron Devices, vol. ED-34, No. 12, Dec. 1987, pp. 2562-2563.

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