Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1997-10-24
1999-06-29
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257467, 374187, H01L 2982
Patent
active
059172266
ABSTRACT:
An integrated circuit and method are provided for sensing activity such as temperature variations in a surrounding environment. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to the switch detecting circuit region. The sensor switching region preferably includes a fixed contact layer, a sacrificial layer on the fixed contact layer, and a floating contact on the sacrificial layer and having portions thereof overlying the fixed contact layer in spaced relation therefrom in an open switch position and extending lengthwise generally transverse to a predetermined direction. The floating contact preferably includes at least two layers of material. Each of the at least two layers have a different thermal expansion coefficient so that the floating contact displaces in the predetermined direction responsive to a predetermined temperature variation so as to contact the fixed contact layer and thereby form a closed switch position. The methods of forming an integrated sensor advantageously are preferably compatible with known integrated circuit manufacturing processes, such as for CMOS circuit manufacturing, with only slight variations therefrom.
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Chan Tsiu Chiu
DeSilva Melvin Joseph
Chaudhuri Olik
Galanthay Theodore E.
Jorgenson Lisa K.
Regan Christopher F.
STMicroelectronics Inc.
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