Integrated process for thin film resistors with silicides

Details Integrated process for thin film resistors with silicides Integrated process for thin film resistors with silicides

2008-03-11

2008-03-11

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S745000, C438S754000, C216S103000, C216S106000

Reexamination Certificate

active

11101891

ABSTRACT:
The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and then forming interconnect metal layers.

REFERENCES:
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patent: 5547896 (1996-08-01), Linn et al.
patent: 6365482 (2002-04-01), Maghsoudnia
patent: 6921962 (2005-07-01), Bailey et al.
patent: 2005/0003673 (2005-01-01), Mahdavi

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