Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2005-08-02
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S624000, C438S638000, C438S639000, C438S640000, C438S643000, C438S678000, C438S687000, C438S696000, C438S724000, C438S757000
Reexamination Certificate
active
06924221
ABSTRACT:
A process for fabricating a dual damascene structure of copper has been developed. This process uses a thin nitride spacer, approximately 100 Angstroms thick, at the bottom of the via, thus preventing recessed nitride during the resist stripping process.
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Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Toniae M.
Thomas Kayden Horstemeyer & Risley
Wilczewski Mary
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