Integrated power semiconductor transistor with current sensing

Details Integrated power semiconductor transistor with current sensing Integrated power semiconductor transistor with current sensing

1998-07-14

2000-10-31

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, 257350, 257226, 257233, 257266, 257207, H01L 31113

Patent

active

061406805

ABSTRACT:
The present invention relates to semiconductor integrated transistors comprising a conduction section and a sense section for the current flowing through the conduction section both sections being located within a region. To ensure that sensing is accurate and takes into account that the surface of the power transistor reach in operation a non-uniform temperature, the conduction section and sense section are located in such a manner that, in operation, the temperature distributions of the two sections are substantially equal.

REFERENCES:
patent: 5365085 (1994-11-01), Tokura et al.
patent: 5543632 (1996-08-01), Ashley

Affiliated with

Also associated with

Rating

Integrated power semiconductor transistor with current sensing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated power semiconductor transistor with current sensing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated power semiconductor transistor with current sensing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2054979