Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-19
1998-03-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257372, 257373, 257369, 257360, 257379, 257500, H01L 2362
Patent
active
057264783
ABSTRACT:
An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.
REFERENCES:
patent: 3967295 (1976-06-01), Stewart
patent: 4616243 (1986-10-01), Minato et al.
patent: 5491358 (1996-02-01), Miyata
Design und Elektronik, Issue 21, Oct. 14, 1986, pp. 126-130 (Enzinger et al.).
Phillips Journal of Research, vol. 44, Nos. 2/3, 1989, pp. 241-255 (Grossens et al.).
Gantioler Josef-Matthias
Leipold Ludwig
Sander Rainald
Stengl Jens-Peer
Tihanyi Jenoe
Crane Sara W.
Greenberg Laurence A.
Hardy David B.
Lerner Herbert L.
Siemens Aktiengesellschaft
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