Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2011-05-03
2011-05-03
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
C257SE27010
Reexamination Certificate
active
07935607
ABSTRACT:
According to one aspect of the present invention, a method of forming a microelectronic assembly, such as an integrated passive device (IPD) (72), is provided. An insulating dielectric layer (32) having a thickness (36) of at least 4 microns is formed over a silicon substrate (20). At least one passive electronic component (62) is formed over the insulating dielectric layer (32).
REFERENCES:
patent: 4961767 (1990-10-01), Schermerhorn et al.
patent: 5063655 (1991-11-01), Lamey et al.
patent: 5559349 (1996-09-01), Cricchi et al.
patent: 6388290 (2002-05-01), Celler et al.
patent: 6444517 (2002-09-01), Hsu et al.
patent: 7102227 (2006-09-01), Terui
patent: 2004/0147087 (2004-07-01), Cheng et al.
patent: 2005/0040471 (2005-02-01), Harris et al.
patent: 2005/0093397 (2005-05-01), Yamada et al.
patent: 2005/0253255 (2005-11-01), Degani et al.
patent: 2005/0263835 (2005-12-01), Sakama et al.
patent: 2006/0128137 (2006-06-01), Furukawa et al.
patent: 2006/0189068 (2006-08-01), Larkin et al.
patent: 2007/0210866 (2007-09-01), Sato et al.
patent: 2007/0215976 (2007-09-01), Degani et al.
Dictionary Entry: “Harmonic Filter”: Academic Press Dictionary of Science and Technology, 1992.
Abrokwah, J.,et al.,“GaAs Integrated Passive Technology at Freescale Semiconductor”, 2005 GaAs MANTECH Conference Digest.
Abrokwah, J.,et al.,“Flip-chip Low Band Harmonic Filter Based on GaAs Integrated Passives” 2006 GaAs MANTECH Technical Digest.
Liu, L., et al., “Compact Harmonic Filter Design and Fabrication using IPD Technology” 2005 Electronic Component and Technology Conference Digest.
“Thin Film Passive Devices”, Prismark Wireless Technology Report, Aug. 2003.
Abrokwah Jonathan K.
Costello Keri L.
Cotronakis James G.
Daly Terry K.
Fender Jason R.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Lee Hsien-Ming
Parendo Kevin
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