Integrated passive device with a high resistivity substrate...

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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C257SE27010

Reexamination Certificate

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07935607

ABSTRACT:
According to one aspect of the present invention, a method of forming a microelectronic assembly, such as an integrated passive device (IPD) (72), is provided. An insulating dielectric layer (32) having a thickness (36) of at least 4 microns is formed over a silicon substrate (20). At least one passive electronic component (62) is formed over the insulating dielectric layer (32).

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