Integrated passive device and method of fabrication

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S414000, C257S533000, C257SE27025, C257SE29324, C257SE31113

Reexamination Certificate

active

07663196

ABSTRACT:
A device20includes substrates22and24coupled to form a volume32between the substrates. A surface28of the substrate22faces a surface30of the substrate24. A metal-insulator-metal capacitor34is formed on one of the surfaces28and30. A conductive element58spans between a top electrode56of the capacitor34and the other surface28and30. Vias64and66extend through the substrate22and are electrically interconnected with the conductive element58and a bottom electrode52of the capacitor34. Another device72includes an underpass transmission line92formed on a surface80of a substrate74within a volume84formed between the substrate74and another substrate76. The line92underlies an integrated device96formed on a surface78of the substrate74.

REFERENCES:
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patent: 6307452 (2001-10-01), Sun
patent: 6384353 (2002-05-01), Huang et al.
patent: 6507475 (2003-01-01), Sun
patent: 6706548 (2004-03-01), Liu
patent: 6777263 (2004-08-01), Gan et al.
patent: 6794101 (2004-09-01), Liu et al.
patent: 6858892 (2005-02-01), Yamagata
patent: 6872902 (2005-03-01), Cohn et al.

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