Integrated pad and fuse structure for planar copper metallurgy

Details Integrated pad and fuse structure for planar copper metallurgy Integrated pad and fuse structure for planar copper metallurgy

1997-09-09

1998-08-18

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438623, 438626, 438627, 438688, 438687, 438642, H01L 2940, H01L 2348, H01L 2352

Patent

active

057958190

ABSTRACT:
A semiconductor interconnection consists of a corrosion resistant integrated fuse and Controlled, Collapse Chip Connection (C4) structure for the planar copper Back End of Line (BEOL). Non copper fuse material is directly connected to copper wiring.

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J. E. Cronin et al. "Polysilicon Strap Process for Fuseszz", Kenneth Mason Publications Ltd, England, Mar. 1990, No. 311.
K. B. Albaugh et al. "Fuse Structure for Wide Fuse Materials Choice", vol. 32, No. 3A, Aug. 1989, pp. 438-439.

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