Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2008-07-30
2011-11-15
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S022000, C438S034000, C438S040000, C438S043000, C438S962000, C257S019000, C257S014000, C257S009000
Reexamination Certificate
active
08058155
ABSTRACT:
The present invention provides a method for the controlled synthesis of nanostructures on the edges of electrodes and an apparatus capable of optical and electrochemical sensing. In accordance with the present invention, a method of fabricating nanowires is provided. In one embodiment, the method includes providing a substrate, creating a dielectric thereon, depositing a metal catalyst on the dielectric, patterning the metal catalyst, selectively etching dielectric, creating an electric field originating in metal catalyst, and applying a heat treatment. In another embodiment, the method includes providing a substrate, depositing a dielectric thereon, printing a metal catalyst on the dielectric and plastic substrate, printing silicide along the edges of metal catalyst, creating an electric field originating in metal catalyst; and applying chemical vapor deposition. The apparatus of the present invention comprise an electrode with nanowires grown thereon, wherein the nanowires' placement and direction of growth is controlled.
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Dunn Courtney M.
Nguyen Ha Tran T
Pathak Shantanu C
Smith & Hopen , P.A.
University of South Florida
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