Integrated nanotube and field effect switching devices

Details Integrated nanotube and field effect switching devices Integrated nanotube and field effect switching devices

2009-07-21

2010-12-28

Cho, James (Department: 2819)

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Field-effect transistor

C326S136000, C977S700000

Reexamination Certificate

active

07859311

ABSTRACT:
Hybrid switching devices integrate nanotube switching elements with field effect devices, such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In embodiments of the invention, the conductive channel includes a nanotube channel element and a field modulatable semiconductor channel element. The switching device may include a nanotube switching element and a field effect device electrically disposed in series. According to one aspect of the invention, an integrated switching device is a four-terminal device with a signal input terminal, a control input terminal, a second input terminal, and an output terminal. The devices may be non-volatile. The devices can form the basis for a hybrid NT-FET logic family and can be used to implement any Boolean logic circuit.

REFERENCES:
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 7049625 (2006-05-01), Kern et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2005/0062035 (2005-03-01), Bertin et al.
Lin, Y. et al. “Novel Carbon Nanotube FET Design with Tunable Polarity,” IEDM 04-0687, 29.2.1-29.2.4, 2004.
Luyken, R.J. et al., “Concepts for hybrid CMOS-molecular non-volatile memories,” Nanotechnology 14 (2003) 273-276.

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