Integrated monolithic laser-modulator component with multiple qu

Coherent light generators – Particular active media – Semiconductor

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372 26, 372102, H01S 319

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active

056804113

ABSTRACT:
An integrated monolithic laser-modulator component having a multiple quantum well structure. This component includes an InP substrate, a laser (L) formed from a stack of semiconductor layers epitaxied on the substrate, including an active and absorbent layer and a periodic Bragg grating fixing the emission wavelength of the laser to a value slightly above an optimum wavelength of the laser gain peak. An electrooptical modulator (M) is formed from the same stack of semiconductor layers, with the exception of the Bragg grating, the active layer of the laser and the absorbing layer of the modulator being formed by the same epitaxied structure having several constrained or unconstrained quantum wells, the modulator functioning according to a confined Stark effect. The semiconductor layers of the laser and those of the modulator are electrically controlled.

REFERENCES:
patent: 4622674 (1986-11-01), Mito
patent: 4961198 (1990-10-01), Ishino et al.
Aoki et al, "InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, pp. 2088-2096 Jun. 1993.

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