Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1998-02-25
2000-10-17
Dutton, Brian
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
7351422, 7351423, 7351432, H01L 2100, G01P 1500, G01P 15125
Patent
active
061330590
ABSTRACT:
The integrated micromechanical sensor device contains a body with a substrate (1) on which an insulating layer (2) and thereon a monocrystalline silicon layer (3) are arranged, in which the silicon layer has trenches as far as the surface of the insulating layer, and the side walls of the trenches as well as the side of the silicon layer adjacent to the insulating layer have a first doping type (n.sup.+) and the silicon layer has a second doping type (n.sup.-) at least in a partial region of its remaining surface, in which the silicon layer has a transistor arrangement in a first region (TB) and a sensor arrangement in a second region (SB), for which the insulating layer (2) is partly removed under the second region. Such a sensor device has considerable advantages over known devices with regard to its properties and its production process.
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Dutton Brian
Greenberg Laurence A.
Infineon - Technologies AG
Lerner Herbert L.
Stemer Werner H.
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