Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2007-12-13
2010-06-29
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C257SE21481
Reexamination Certificate
active
07745892
ABSTRACT:
The present invention provides a MEMS switch that is formed on, not merely placed on, a semiconductor substrate of a semiconductor device. The basic semiconductor substrate includes a handle wafer, an insulator layer over the handle wafer, and a device layer over the insulator layer. The device layer is one in which active semiconductor devices, such as transistors and diodes, may be formed. The MEMS switch is formed over the device layer during fabrication of the semiconductor device. Additional layers, such as connecting layers, passivation layers, and dielectric layers, may be inserted among or between any of these various layers without departing from the essence of the invention. As such, the present invention avoids the need to fabricate MEMS switches apart from the devices that contain circuitry to be associated with the MEMS switches, and to subsequently mount the MEMS switches to modules that circuitry.
REFERENCES:
patent: 7135766 (2006-11-01), Costa et al.
patent: 2006/0012014 (2006-01-01), Chen et al.
patent: 2006/0108675 (2006-05-01), Colgan et al.
patent: 2007/0103028 (2007-05-01), Lewis et al.
patent: 2007/0172975 (2007-07-01), Tomomatsu et al.
patent: 2007/0281381 (2007-12-01), Ayazi
patent: 2008/0164542 (2008-07-01), Yang et al.
Costa, J. et al., “Integrated MEMS Switch Technology on SOI-CMOS,” Proceedings of Hilton Head Workshop 2008: A Solid-State Sensors, Actuators and Microsystems Workshop.
Costa, J. et al., “A Silicon RFCMOS SOI Technology for Integrated Cellular/WLAN RF TX Modules,” Proceedings of the IEEE MTS Microwave Symposium, 2007, pp. 445-448, IEEE.
Guan, Lingpeng et al., “A Fully Integrated SOI RF MEMS Technology for System-on-a-Chip Applications,” IEEE Transactions on Electron Devices, Jan. 2006, pp. 167-172, vol. 53, No. 1, IEEE.
Joseph, Alvin et al., “A 0.35 um SiGe BiCMOS Technology for Power Amplifier Applications,” IEEE BCTM Conference Proceedings, 2007, pp. 198-201, IEEE.
Kelly, Dylan et al., “The State-of-the-Art of Silicon-on-Sapphire CMOS RF Switches,” Proceedings of the IEEE Compound Semiconductor Symposium, 2005, pp. 200-205.
Mazure, Carlos et al., “Engineering Wafers for the Nanotechnology Era,” Proceedings of ESSCIRC, 2005, pp. 29-38, IEEE.
Shokrani, Mohsen et al., “InGap-Plus(TM): A Low Cost Manufacturable GaAs BiFET Process Technology,” Proceedings of the GaAs MANTECH Conference, 2006, pp. 153-156.
Tinella, C. et al., “0.13um CMOS SOI SP6T Antenna Switch for Multi-Standard Handsets,” Topic Meeting on Silicon Monolithic Circuits in RF Systems, 2006, pp. 58-61, IEEE.
Tombak, Ali et al., “A Flip-Chip Silicon IPMOS Power Amplifier and a DC/DC Converter for GSM 850/900/1800/1900 MHz Systems,” Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium, 2007, pp. 79-82, IEEE.
Wohlmuth, Walter A. et al., “E-/D-pHEMT Technology for Wireless Components,” Proceedings of the Compound Semiconductor Circuit Symposium, 2004, pp. 115-118, IEEE.
Costa Julio
Hammond Jonathan Hale
Ivanov Tony
Diallo Mamadou
RF Micro Devices, Inc.
Toledo Fernando L
Withrow & Terranova , PLLC
LandOfFree
Integrated MEMS switch does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated MEMS switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated MEMS switch will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4209748