Integrated memory having a voltage generator circuit for...

Details Integrated memory having a voltage generator circuit for... Integrated memory having a voltage generator circuit for...

2006-06-27

2006-06-27

Phan, Trong (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S207000, C365S226000

Reexamination Certificate

active

07068546

ABSTRACT:
An integrated memory contains a memory cell array, which has word lines and bit lines, and a read/write amplifier, which is connected to the bit lines for the assessing and amplifying data signals. A voltage generator circuit generates a voltage supply for application to the read/write amplifier. A potential difference is applied to the read/write amplifier using different supply potentials. The voltage generator circuit increases the potential difference applied to the read/write amplifier for a limited period of time during an assessment and amplification operation of the read/write amplifier. Charge-dependent control is implemented in the voltage generator circuit. An assessment and amplification operation can be carried out at a comparatively high switching speed and a low power consumption is possible.

REFERENCES:
patent: 4156938 (1979-05-01), Proebsting et al.
patent: 5416743 (1995-05-01), Allan et al.
patent: 5901102 (1999-05-01), Furutani
patent: 5970007 (1999-10-01), Shiratake
patent: 6337824 (2002-01-01), Kono et al.
patent: 6493282 (2002-12-01), Iida et al.

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