Integrated memory comprising a sense amplifier

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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Details

365206, 365207, 365208, 307530, G11C 706, H03K 522

Patent

active

052415040

ABSTRACT:
An integrated memory includes a sense amplifier which has a parallel connection of a first and a second current branch, each current branch including channels of a control transistor and a load transistor which are coupled via a junction point, the junction points in each current branch being cross-wise coupled to the gates of the load transistors in the other current branch, and the junction points constituting outputs of the sense amplifier. The control and load transistors are of the same conductivity type, with each load transistor being connected in a source-follower configuration with its associated control transistor. As a result, the control transistors will be operative in the saturation region at all times and can be driven to full output, so that an integrated memory incorporating the invention is faster.

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