Integrated memory circuit with high density load elements

Details Integrated memory circuit with high density load elements Integrated memory circuit with high density load elements

1992-04-20

1994-09-20

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 69, 257393, 257903, 257904, H01L 2701

Patent

active

053492064

ABSTRACT:
An integrated circuit with high density load elements in memory cells forming a memory array wherein the load elements are either of the active (e.g., TFTs) or passive (e.g., resistance) type and designed so that the connection path between these elements and active element domains is extended to be longer within the same or smaller scale of the memory cell configuration. For this purpose, the connection path may be made to meander to provide for greater length, i.e., extend in one direction and then another within a single memory cell configuration. This further creates additional space for extending the resistance value of the active or passive load element which, in turn, permits a reduction in drain current, i.e., current consumption, during operational conditions of the memory cells or other circuits. The design further provides for improved mask alignment accuracy since the load element is completely constructed within a planar extent of the memory cell so that predetermined lengths of the element and predetermined, desired resistance levels can be achieved and maintained without concern for resistance level changes due to subsequent integrated circuit processing and contaminate migration.

REFERENCES:
patent: 4805147 (1989-02-01), Yamanaka et al.
patent: 4853894 (1989-08-01), Yamanaka et al.
patent: 5057898 (1991-10-01), Adan et al.
patent: 5107322 (1992-04-01), Kimura
patent: 5157474 (1992-10-01), Ochii

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