Silicon carbide wafer bonded to a silicon wafer

Details Silicon carbide wafer bonded to a silicon wafer Silicon carbide wafer bonded to a silicon wafer

1993-02-22

1994-09-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257201, 257192, 257777, 437100, H01L 29161

Patent

active

053492072

ABSTRACT:
A silicon carbide structure (10) and method capable of using existing silicon wafer fabrication facilities. A silicon wafer (20) is provided which has a first diameter. At least one silicon carbide wafer (30) is provided which has a given width and length (or diameter). The width and length (or diameter) of the silicon carbide wafer (30) are smaller than the diameter of the silicon wafer (20). The silicon wafer (20) and the silicon carbide wafer (30) are then bonded together. The bonding layer (58) may comprise silicon germanium, silicon dioxide, silicate glass or other materials. Structures such as MOSFET (62) may be then formed in silicon carbide wafer (30).

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