Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1989-02-02
1991-03-26
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365191, 365233, G11C 1700
Patent
active
050035126
ABSTRACT:
An integrated memory circuit includes a high-voltage switch which is connected between a programming voltage generator and an erasable programmable memory. In the preferred embodiment of the memory circuit, the switch includes a first transistor of the field-effect enhancement type which is connected between a high-voltage point and a control electrode of a second transistor, also being of the field-efffect enhancement type, which is connected between the high-voltage point and the control electrode of the first transistor. By driving the two control electrodes by means of mutually complementary clock signals, via a capacitance, the programming voltage is step-wise built up on the control electrodes of the cross-wise coupled transistors. The switch is less susceptible to crosstalk on the clock lines and is realized using fewer masking steps than the prior art switch.
REFERENCES:
patent: 4527074 (1985-07-01), Donaldson et al.
patent: 4734599 (1988-03-01), Bohac, Jr.
Biren Steven R.
Popek Joseph A.
U.S. Philips Corp.
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