Integrated memory circuit having a high-voltage switch

Details Integrated memory circuit having a high-voltage switch Integrated memory circuit having a high-voltage switch

1989-02-02

1991-03-26

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365191, 365233, G11C 1700

Patent

active

050035126

ABSTRACT:
An integrated memory circuit includes a high-voltage switch which is connected between a programming voltage generator and an erasable programmable memory. In the preferred embodiment of the memory circuit, the switch includes a first transistor of the field-effect enhancement type which is connected between a high-voltage point and a control electrode of a second transistor, also being of the field-efffect enhancement type, which is connected between the high-voltage point and the control electrode of the first transistor. By driving the two control electrodes by means of mutually complementary clock signals, via a capacitance, the programming voltage is step-wise built up on the control electrodes of the cross-wise coupled transistors. The switch is less susceptible to crosstalk on the clock lines and is realized using fewer masking steps than the prior art switch.

REFERENCES:
patent: 4527074 (1985-07-01), Donaldson et al.
patent: 4734599 (1988-03-01), Bohac, Jr.

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