Integrated memory arrangement based on resistive memory...

Details Integrated memory arrangement based on resistive memory... Integrated memory arrangement based on resistive memory...

2007-06-19

2007-06-19

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S163000, C365S149000, C257S386000, C327S382000

Reexamination Certificate

active

11209977

ABSTRACT:
An integrated memory arrangement based on resistive memory cells that can be changed over between a first state of high electrical resistance and a second state of low electrical resistance, each memory cell having an electrical additional capacitance that increases its capacitance, and to a production method.

REFERENCES:
patent: 6504214 (2003-01-01), Yu et al.
patent: 6906548 (2005-06-01), Toshiyuki et al.
patent: 2006/0166455 (2006-07-01), Gordon et al.

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