Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-11-29
2005-11-29
Yoha, Connie C. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S190000, C365S189080
Reexamination Certificate
active
06970389
ABSTRACT:
An integrated memory can include a memory cell array, which has word lines for the selection of memory cells, bit lines for reading out or writing data signals of the memory cells, and a sense amplifier connected to bit lines of a bit line pair at one end of the bit line pair. In an activated state during a memory access, at least one activatable isolation circuit which is switched into one of the bit line pairs can isolate a part of the bit line pair, which is more remote from the sense amplifier from the sense amplifier. As a result, the effective capacitance of the bit lines can be significantly reduced during the memory access.
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Benzinger Herbert
Proell Manfred
Schroeder Stephan
Von Campenhausen Aurel
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Yoha Connie C.
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