Integrated low k dielectrics and etch stops

Details Integrated low k dielectrics and etch stops Integrated low k dielectrics and etch stops

2007-06-05

2007-06-05

Clark, S. V. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S637000, C257S758000

Reexamination Certificate

active

10924551

ABSTRACT:
A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

REFERENCES:
patent: 4303632 (1981-12-01), Gosser
patent: 4676867 (1987-06-01), Elkins et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4803139 (1989-02-01), Yoshizawa et al.
patent: 4845054 (1989-07-01), Mitchener
patent: 4900591 (1990-02-01), Bennett et al.
patent: 5082647 (1992-01-01), Chuang
patent: 5204141 (1993-04-01), Roberts et al.
patent: 5262279 (1993-11-01), Tsang et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5302236 (1994-04-01), Tahara et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5360646 (1994-11-01), Morita
patent: 5362526 (1994-11-01), Wang et al.
patent: 5486493 (1996-01-01), Jeng
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5492736 (1996-02-01), Laxman et al.
patent: 5559055 (1996-09-01), Chang et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5591677 (1997-01-01), Jeng
patent: 5593741 (1997-01-01), Ikeda
patent: 5598027 (1997-01-01), Matsuura
patent: 5610105 (1997-03-01), Vines et al.
patent: 5660738 (1997-08-01), Hunter, Jr. et al.
patent: 5679608 (1997-10-01), Cheung et al.
patent: 5683940 (1997-11-01), Yahiro
patent: 5691247 (1997-11-01), Lavie et al.
patent: 5693563 (1997-12-01), Teong
patent: 5700720 (1997-12-01), Hashimoto
patent: 5703404 (1997-12-01), Matsuura
patent: 5710079 (1998-01-01), Sukharev
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5789319 (1998-08-01), Havemann et al.
patent: 5807785 (1998-09-01), Ravi
patent: 5812403 (1998-09-01), Fong et al.
patent: 5834847 (1998-11-01), Jung et al.
patent: 5843535 (1998-12-01), Dobson et al.
patent: 5843847 (1998-12-01), Pu et al.
patent: 5858880 (1999-01-01), Dobson et al.
patent: 5891799 (1999-04-01), Tsui
patent: 5904952 (1999-05-01), Lopata et al.
patent: 6054206 (2000-04-01), Mountsier
patent: 6054379 (2000-04-01), Yau et al.
patent: 6068884 (2000-05-01), Rose et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6124641 (2000-09-01), Matsuura
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6169021 (2001-01-01), Akram et al.
patent: 6211092 (2001-04-01), Tang et al.
patent: 6225211 (2001-05-01), Tsui
patent: 6232235 (2001-05-01), Cave et al.
patent: 6251770 (2001-06-01), Uglow et al.
patent: 6284149 (2001-09-01), Li et al.
patent: 6287990 (2001-09-01), Cheung et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6348725 (2002-02-01), Cheung et al.
patent: 6350670 (2002-02-01), Andideh et al.
patent: 6363091 (2002-03-01), Zhu et al.
patent: 6399511 (2002-06-01), Tang et al.
patent: 6407011 (2002-06-01), Ikeda et al.
patent: 6451683 (2002-09-01), Farrar
patent: 6509258 (2003-01-01), Farrar
patent: 6514667 (2003-02-01), Angelopoulos et al.
patent: 6514671 (2003-02-01), Parikh et al.
patent: 6518646 (2003-02-01), Hopper et al.
patent: 6537929 (2003-03-01), Cheung et al.
patent: 6570256 (2003-05-01), Conti et al.
patent: 6573572 (2003-06-01), Farrar
patent: 6593251 (2003-07-01), Baklanov et al.
patent: 6669858 (2003-12-01), Bjorkman et al.
patent: 6740539 (2004-05-01), Conti et al.
patent: 6756674 (2004-06-01), Catabay et al.
patent: 6887780 (2005-05-01), Andideh et al.
patent: 2001/0046567 (2001-11-01), Matsuki et al.
patent: 2002/0011774 (2002-01-01), Patterson et al.
patent: 2002/0074309 (2002-06-01), Bjorkman et al.
patent: 2003/0017642 (2003-01-01), Conti et al.
patent: 2003/0024902 (2003-02-01), Li et al.
patent: 2003/0042605 (2003-03-01), Andideh et al.
patent: 2003/0153198 (2003-08-01), Conti et al.
patent: 2005/0051900 (2005-03-01), Liu et al.
patent: 2005/0118799 (2005-06-01), Wu
patent: 196 54 737 (1997-03-01), None
patent: 198 04 375 (1999-07-01), None
patent: 0 469 926 (1992-02-01), None
patent: 0 522 799 (1992-07-01), None
patent: 0 519 079 (1992-12-01), None
patent: 0 721 019 (1996-07-01), None
patent: 0 743 675 (1996-11-01), None
patent: 0 774 533 (1997-05-01), None
patent: 0 721 019 (1997-07-01), None
patent: 0 840 365 (1998-05-01), None
patent: 0 849 374 (1998-06-01), None
patent: 0 849 789 (1998-06-01), None
patent: 0 885 983 (1998-12-01), None
patent: 0 935 283 (1999-08-01), None
patent: 0 960 958 (1999-12-01), None
patent: 1 059 664 (2000-12-01), None
patent: 1 063 692 (2000-12-01), None
patent: 1 123 991 (2001-08-01), None
patent: 1 059 664 (2001-10-01), None
patent: 2 317 270 (1998-03-01), None
patent: 01-050429 (1989-02-01), None
patent: 05-267480 (1993-10-01), None
patent: 09-008031 (1997-01-01), None
patent: 09-237785 (2003-07-01), None
patent: WO 92/12535 (1992-07-01), None
patent: WO 94/01885 (1994-01-01), None
patent: WO 98/08249 (1998-02-01), None
patent: WO 98/59089 (1998-12-01), None
patent: WO 99/41423 (1999-08-01), None
patent: WO 99/55526 (1999-11-01), None
patent: WO 99/63591 (1999-12-01), None
patent: WO 00/22671 (2000-04-01), None
PCT International Search Report for PCT/US99/02903, dated Aug. 31, 1999 (APPM/002592.PC).
Bakli, et al., “Materials and Processing for .025 μm Multilevel Interconnect,” Microelectronic Engineering 33 (1997) pp. 175-188.
Bhan, et al., “Deposition of Stable Low K and High Deposition Rate SiF4-Doped TEOS Fluorinated Silicon Dioxide (SiOF) Films,” Thin Solid Films 308-309 (1997) pp. 507-511.
C.F. Lin, et al., “Improved Ozone-Tetraethoxysilane Oxide Reliability for Deep Submicron Inter-Metal Dielectric Applications by Deposition of a Silane-Based Oxide Underlayer,” Thin Solid Films 308-309 (1997) pp. 621-626.
European Search Report from European Patent Office for 99906897.6 (2592.EP), dated Jan. 10, 2005.
European Search Report for EP 01 30 3567, dated Nov. 4, 2004 (AMAT/2592.P3).
McClatchie, et al., “Low Dielectric Constant Flowfill Technology for IMD Applications,” Feb. 10-11, 1997, DUMIC Conference, pp. 34-40.
Buckley, et al., “Evaluation of Visible-Light Photolysis of Ozone-Water Cluster Molecules as a Source of Atmospheric Hydroxyl Radical and Hydrogen Peroxide,” Atmospheric Environment, vol. 29, No. 18, pp. 2409-2415 (1995).
Tada, et al., “Correlations Between Wetting and Structure In Methylsiloxane Layers on Oxides Formed by Chemical Vapor Surface Modification,” J. of Physics. Chem. vol. 98, No. 47 pp. 12452-12457 (Nov. 24, 1994).
C.D. Dobson, et al., “Advanced SiO2 Planarization Using Silane and H202,” Semiconductor International (Dec. 1994), pp. 85-87.
Matsuura, et al., “Novel Self-Planarizing CVD Oxide for Interlayer Dielectric Applications,” IEDM (1994) pp. 5.7.1-5.7.4.
Gaillard, et al., “Silicon Oxide Chemical Vapor Deposition Using Silane and Hydrogen Peroxide,” J. Vac. Sci. Technology (Jul./Aug. 1996) pp. 2767-2769.
Nara, et al., “Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O2,” Japanese Journal of Applied Physics, vol. 36. No. 3B (Mar. 1997), pp. 1477-1480.
Grill, et al., “Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane”,J. of Applied Physics, vol. 85. No. 6 (Mar. 1999), pp. 3314-3318.
Grill, et al., “Novel Low k Dielectrics bas

Affiliated with

Also associated with

Rating

Integrated low k dielectrics and etch stops does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated low k dielectrics and etch stops, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated low k dielectrics and etch stops will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3824470