Integrated low K dielectrics and etch stops

Details Integrated low K dielectrics and etch stops Integrated low K dielectrics and etch stops

2005-02-22

2005-02-22

Kornakov, M. (Department: 1746)

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

C216S059000, C216S063000, C216S064000, C216S067000, C438S780000, C438S618000, C438S689000, C438S735000, C438S737000, C438S778000

Reexamination Certificate

active

06858153

ABSTRACT:
A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

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