Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-08-06
1995-02-21
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257378, 257577, 257588, 257344, 257346, 257607, H01L 2702
Patent
active
053919050
ABSTRACT:
A logic circuit comprising an active-pull-down circuit in which electrodes of an active capacitor are formed of a conductive layer in common with one of contact electrodes of neighboring transistors is disclosed. The area for the capacitor is reduced, so that the element-occupied area is minimum even when the absorbing capability of the active-pull-down circuit is designed to be high for reducing a transient duration of an output signal. Besides, capacitor insulation film is used as a mask during a process, so that the process for fabrication of the integrated circuit is simplified.
REFERENCES:
patent: 4994887 (1991-02-01), Hutter et al.
patent: 5057894 (1991-10-01), Ikeda et al.
patent: 5065208 (1991-11-01), Shah et al.
"High-Speed Low-Power Charge-Buffered Active-Pull-Down ECL Circuit", by C. T. Chuang et al., IEEE 1990 Bipolar Circuits and Technology Meeting, pp. 132-135.
"SPL (Super Push-pull Logic) A Bipolar Novel Low-power High-speed Logic Circuit", by Mitsuo Usami et al., pp. 11-12.
Munson Gene M.
NEC Corporation
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