Integrated logic circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257378, 257577, 257588, 257344, 257346, 257607, H01L 2702

Patent

active

053919050

ABSTRACT:
A logic circuit comprising an active-pull-down circuit in which electrodes of an active capacitor are formed of a conductive layer in common with one of contact electrodes of neighboring transistors is disclosed. The area for the capacitor is reduced, so that the element-occupied area is minimum even when the absorbing capability of the active-pull-down circuit is designed to be high for reducing a transient duration of an output signal. Besides, capacitor insulation film is used as a mask during a process, so that the process for fabrication of the integrated circuit is simplified.

REFERENCES:
patent: 4994887 (1991-02-01), Hutter et al.
patent: 5057894 (1991-10-01), Ikeda et al.
patent: 5065208 (1991-11-01), Shah et al.
"High-Speed Low-Power Charge-Buffered Active-Pull-Down ECL Circuit", by C. T. Chuang et al., IEEE 1990 Bipolar Circuits and Technology Meeting, pp. 132-135.
"SPL (Super Push-pull Logic) A Bipolar Novel Low-power High-speed Logic Circuit", by Mitsuo Usami et al., pp. 11-12.

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