Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29012, C257S335000
Reexamination Certificate
active
07989889
ABSTRACT:
The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The source to drain voltage capability of the LHV-MOSFET may be increased by using an intrinsic material between the source and the drain. The gate voltage capability of the LHV-MOSFET may be increased by using an insulator material, such as a thick oxide, between the gate and the channel of the LHV-MOSFET.
REFERENCES:
patent: 6458632 (2002-10-01), Song et al.
patent: 6533907 (2003-03-01), Demaray et al.
patent: 6660616 (2003-12-01), Babcock et al.
patent: 7075122 (2006-07-01), Yang et al.
patent: 7135766 (2006-11-01), Costa et al.
patent: 7276766 (2007-10-01), Tu et al.
patent: 7633095 (2009-12-01), Kerr et al.
patent: 2003/0089930 (2003-05-01), Zhao
patent: 2005/0118768 (2005-06-01), Chen
patent: 2006/0205106 (2006-09-01), Fukuda et al.
patent: 2007/0007545 (2007-01-01), Salcedo et al.
patent: 2008/0079122 (2008-04-01), Zhu et al.
patent: 2008/0237704 (2008-10-01), Williams et al.
patent: 2009/0090979 (2009-04-01), Zhu et al.
patent: 2009/0162979 (2009-06-01), Yang et al.
Exhibit A: S. M. Sze, Physics of Semiconductor Devices, John Wiley and SOns, Second Edition, 1981, pp. 32-33,101-105,489-490, and 852.
Costa, J. et al., “Imtegrated MEMS Switch Technology on SOI-CMOS,” Proceedings of Hilton Head Workshop 2008: A Solid-State Sensors, Actuators and Microsystems Workshop.
Costa, J. et al., “A Silicon RFCMOS SOI Technology for Integrated Cellular/WLAN RF TX Modules,” Proceedings of the IEEE MTS Microwave Symposium, 2007, pp. 445-448, IEEE.
Guan, Lingpeng et al., “A Fully Integrated SOI RF MEMS Technology for System-on-a-Chip Applications,” IEEE Transactions on Electron Devices, Jan. 2006, pp. 167-172, vol. 53, No. 1, IEEE.
Joseph, Alvin et al., “A 0.35 um SiGe BiCMOS Technology for Power Amplifier Applications,” IEEE BCTM Conference Proceedings, 2007, pp. 198-201, IEEE.
Kelly, Dylan et al., “The State-of-the-Art of Silicon-on-Sapphire CMOS RF Switches,” Proceedings of the IEEE Compound Semiconductor Symposium, 2005, pp. 200-205.
Mazure, Carlos et al., “Engineering Wafers for the Nanotechnology Era,” Proceedings of ESSCIRC, 2005, pp. 29-38, IEEE.
Shokrani, Mohsen et al., “InGap-Plus(TM): A Low Cost Manufacturable GaAs BiFET Process Technology,” Proceedings of the GaAs MANTECH Conference, 2006, pp. 153-156.
Tinella, C. et al., “0.13um CMOS SOI SP6T Antenna Switch for Multi-Standard Handsets,” Topic Meeting on Silicon Monolithic Circuits in RF Systems, 2006, pp. 58-61, IEEE.
Tombak, Ali et al., “A Flip-Chip Silicon IPMOS Power Amplifier and a DC/DC Converter for GSM 850/900/1800/1900 MHz Systems,” Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium, 2007, pp. 79-82, IEEE.
Wohlmuth, Walter A. et al., “E-/D-pHEMT Technology for Wireless Components,” Proceedings of the Compound Semiconductor Circuit Symposium, 2004, pp. 115-118, IEEE.
Mori, Kazuhisa et al., “A 5 to 130V Level Shifter composed of Thin Gate Oxide Dual Terminal Drain PMOSFETS,” IEEE Intl. Symp. Power Semiconductor Devices and ICs, 1997, pp. 345-348, IEEE.
Valeri, Stephen J. et al., “A Composite High-Voltage Device Using Low-Voltage SOI MOSFETS,” IEEE SOS/SOI Technology Conf., 1990, p. 169-170, IEEE.
Notice of Allowance mailed Aug. 19, 2010 regarding U.S. Appl. No. 12/140,504.
Nonfinal Office Action mailed Mar. 4, 2010 regarding U.S. Appl. No. 12/140,504.
Requirement for Restriction/Election mailed Dec. 18, 2009 regarding U.S. Appl. No. 12/140,504.
Notice of Allowance mailed Aug. 7, 2009 regarding U.S. Appl. No. 12/140,517.
Requirement for Restriction/Election mailed Jun. 16, 2009 regarding U.S. Appl. No. 12/140,517.
Costa Julio
Dening David C.
Kerr Daniel Charles
Budd Paul A
Jackson, Jr. Jerome
RF Micro Devices, Inc.
Withrow & Terranova, P.L.L.C.
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