Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S463000, C257S440000, C257S461000, C257SE27143, C257SE31073, C257SE31054, C257SE31093, C257SE27121, C257SE27136
Reexamination Certificate
active
07915652
ABSTRACT:
An integrated infrared (IR) and full color complementary metal oxide semiconductor (CMOS) imager array is provided. The array is built upon a lightly doped p doped silicon (Si) substrate. Each pixel cell includes at least one visible light detection pixel and an IR pixel. Each visible light pixel includes a moderately p doped bowl with a bottom p doped layer and p doped sidewalls. An n doped layer is enclosed by the p doped bowl, and a moderately p doped surface region overlies the n doped layer. A transfer transistor has a gate electrode overlying the p doped sidewalls, a source formed from the n doped layer, and an n+ doped drain connected to a floating diffusion region. The IR pixel is the same, except that there is no bottom p doped layer. An optical wavelength filter overlies the visible light and IR pixels.
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Lee Jong-Jan
Speigle Jon M.
Tweet Douglas J.
Law Office of Gerald Maliszewski
Liu Benjamin Tzu-Hung
Maliszewski Gerald
Ngo Ngan
Sharp Laboratories of America Inc.
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