Integrated FET and schottky device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S330000, C257S327000

Reexamination Certificate

active

06987305

ABSTRACT:
A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.

REFERENCES:
patent: 3798514 (1974-03-01), Hayashi et al.
patent: 4262296 (1981-04-01), Shealy et al.
patent: 4300152 (1981-11-01), Lepselter
patent: 4513309 (1985-04-01), Cricchi
patent: 4823172 (1989-04-01), Mihara
patent: 4827321 (1989-05-01), Baliga
patent: 4871686 (1989-10-01), Davies
patent: 4903189 (1990-02-01), Ngo et al.
patent: 4982244 (1991-01-01), Kapoor
patent: 5111253 (1992-05-01), Korman et al.
patent: 5525829 (1996-06-01), Mistry
patent: 5886383 (1999-03-01), Kinzer
patent: 6049108 (2000-04-01), Williams et al.
patent: 6274905 (2001-08-01), Mo
patent: 6351018 (2002-02-01), Sapp
patent: 6396090 (2002-05-01), Hsu et al.
patent: 6433396 (2002-08-01), Kinzer
patent: 6529034 (2003-03-01), Ranjan
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6617642 (2003-09-01), Georgescu
patent: 6686614 (2004-02-01), Tihanyi
patent: 6707101 (2004-03-01), Ranjan
patent: 6818939 (2004-11-01), Hadizad
patent: 2002/0134998 (2002-09-01), Van Dalen et al.
patent: 2003/0022474 (2003-01-01), Grover et al.
patent: 2003/0040144 (2003-02-01), Blanchard et al.
patent: 2003/0085422 (2003-05-01), Amali et al.
patent: 2003/0207538 (2003-11-01), Hshieh et al.
patent: 2004/0119103 (2004-06-01), Thapar
patent: 2005/0037579 (2005-02-01), Numazawa et al.
patent: 10-189969 (1998-07-01), None
patent: 11-74514 (1999-03-01), None
patent: 2002-334997 (2002-11-01), None
patent: 2003-38760 (2003-03-01), None

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