Integrated emitter formation and passivation

Details Integrated emitter formation and passivation Integrated emitter formation and passivation

2008-09-22

2010-12-07

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S482000, C257SE21135

Reexamination Certificate

active

07846762

ABSTRACT:
Embodiments of the present invention provide a method for forming an emitter region in a crystalline silicon substrate and passivating the surface thereof by depositing a doped amorphous silicon layer onto the crystalline silicon substrate and thermally annealing the crystalline silicon substrate while oxidizing the surface thereof. In one embodiment, the deposited film is completely converted to oxide. In another embodiment, the doped amorphous silicon layer deposited onto the crystalline silicon substrate is converted into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited during emitter formation. In one embodiment, at least a portion of the converted crystalline silicon is further converted into silicon dioxide during the emitter surface passivation.

REFERENCES:
patent: 2008/0057220 (2008-03-01), Bachrach et al.

Affiliated with

Also associated with

Rating

Integrated emitter formation and passivation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated emitter formation and passivation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated emitter formation and passivation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4171203