Integrated electrostatic protective resistor for metal oxide...

Details Integrated electrostatic protective resistor for metal oxide... Integrated electrostatic protective resistor for metal oxide...

1996-04-11

2002-07-16

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000

Reexamination Certificate

active

06420762

ABSTRACT:

BACKGROUND
1. Field of Invention
Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are used in a variety of applications. Currently expensive measures needed to handle MOSFETs properly to safeguard against damage due to electrostatic build up and discharge. The invention pertains to a resistor electrically connected to the Gate and Source nodes of any MOSFET within the MOSFET package.
2. Description of Prior Art
We are not aware of any MOSFETs that incorporate an Electrostatic Protective Resistor within the MOSFET package.
Objects and Advantages
The purpose of our invention is to make the MOSFET electrostatically protected and in turn more reliable. It eliminates the need for electrostatic handling and packaging precautions which would save the electronics industry millions of dollars. Savings would be seen through the elimination of present training and equipment needed to provide the protection.


REFERENCES:
patent: 4963970 (1990-10-01), Throngnumchai et al.
patent: 5087955 (1992-02-01), Futami
patent: 5528064 (1996-06-01), Thiel et al.
patent: 0372820 (1990-06-01), None

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